Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

תקציר מקורי באנגליתarXiv:2609.12184v2 Announce Type: replace-cross Abstract: Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workflow uses measurement--TCAD residuals and local sensitivity tests to select bounded parameter corrections or evaluate additional physical model